Nanoengineered Curie Temperature in Laterally-Patterned Ferromagnetic Semiconductor Heterostructures

We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.Comment: Submitted to Applied Physics Letters (minor corrections

Concerted activities of Mcm4, Sld3 and Dbf4 in control of origin activation and DNA replication fork progression

Eukaryotic chromosomes initiate DNA synthesis from multiple replication origins in a temporally specific manner during S phase. The replicative helicase Mcm2-7 functions in both initiation and fork progression and thus is an important target of regulation. Mcm4, a helicase subunit, possesses an unstructured regulatory domain that mediates control from multiple kinase signaling pathways, including the Dbf4-dependent Cdc7 kinase (DDK). Following replication stress in S phase, Dbf4 and Sld3, an initiation factor and essential target of Cyclin-Dependent Kinase (CDK), are targets of the checkpoint kinase Rad53 for inhibition of initiation from origins that have yet to be activated, so-called late origins. Here, whole genome DNA replication profile analysis is employed to access under various conditions the effect of mutations that alter the Mcm4 helicase regulatory domain and the Rad53 targets, Sld3 and Dbf4. Late origin firing occurs under genotoxic stress when the controls on Mcm4, Sld3 and Dbf4 are simultaneously eliminated. The regulatory domain of Mcm4 plays an important role in the timing of late origin firing, both in an unperturbed S phase and dNTP limitation. Furthermore, checkpoint control of Sld3 impacts fork progression under replication stress. This effect is parallel to the role of the Mcm4 regulatory domain in monitoring fork progression. Hypomorph mutations in sld3 are suppressed by a mcm4 regulatory domain mutation. Thus, in response cellular conditions, the functions executed by Sld3, Dbf4 and the regulatory domain of Mcm4 intersect to control origin firing and replication fork progression, thereby ensuring genome stability

Operator algebra quantum homogeneous spaces of universal gauge groups

In this paper, we quantize universal gauge groups such as SU(\infty), as well as their homogeneous spaces, in the sigma-C*-algebra setting. More precisely, we propose concise definitions of sigma-C*-quantum groups and sigma-C*-quantum homogeneous spaces and explain these concepts here. At the same time, we put these definitions in the mathematical context of countably compactly generated spaces as well as C*-compact quantum groups and homogeneous spaces. We also study the representable K-theory of these spaces and compute it for the quantum homogeneous spaces associated to the universal gauge group SU(\infty).Comment: 14 pages. Merged with [arXiv:1011.1073

Flux through a hole from a shaken granular medium

We have measured the flux of grains from a hole in the bottom of a shaken container of grains. We find that the peak velocity of the vibration, vmax, controls the flux, i.e., the flux is nearly independent of the frequency and acceleration amplitude for a given value of vmax. The flux decreases with increasing peak velocity and then becomes almost constant for the largest values of vmax. The data at low peak velocity can be quantitatively described by a simple model, but the crossover to nearly constant flux at larger peak velocity suggests a regime in which the granular density near the container bottom is independent of the energy input to the system.Comment: 14 pages, 4 figures. to appear in Physical Review

Immobilization of Polyethylene Oxide Surfactants for Non-Fouling Biomaterial Surfaces Using an Argon Glow Discharge Treatment

A non-fouling (protein-resistant) polymer surface is achieved by the covalent immobilization of polyethylene oxide (PEO) surfactants using an inert gas discharge treatment. Treated surfaces have been characterized using electron spectroscopy for chemical analysis (ESCA), static secondary ion mass spectrometry (SSIMS), water contact angle measurement, fibrinogen adsorption, and platelet adhesion. This paper is intended to review our recent work in using this simple surface modification process to obtain wettable polymer surfaces in general, and non-fouling biomaterial surfaces in particular

Domain within the helicase subunit Mcm4 integrates multiple kinase signals to control DNA replication initiation and fork progression

Eukaryotic DNA synthesis initiates from multiple replication origins and progresses through bidirectional replication forks to ensure efficient duplication of the genome. Temporal control of initiation from origins and regulation of replication fork functions are important aspects for maintaining genome stability. Multiple kinase-signaling pathways are involved in these processes. The Dbf4-dependent Cdc7 kinase (DDK), cyclin-dependent kinase (CDK), and Mec1, the yeast Ataxia telangiectasia mutated/Ataxia telangiectasia mutated Rad3-related checkpoint regulator, all target the structurally disordered N-terminal serine/threonine-rich domain (NSD) of mini-chromosome maintenance subunit 4 (Mcm4), a subunit of the mini-chromosome maintenance (MCM) replicative helicase complex. Using whole-genome replication profile analysis and single-molecule DNA fiber analysis, we show that under replication stress the temporal pattern of origin activation and DNA replication fork progression are altered in cells with mutations within two separate segments of the Mcm4 NSD. The proximal segment of the NSD residing next to the DDK-docking domain mediates repression of late-origin firing by checkpoint signals because in its absence late origins become active despite an elevated DNA damage-checkpoint response. In contrast, the distal segment of the NSD at the N terminus plays no role in the temporal pattern of origin firing but has a strong influence on replication fork progression and on checkpoint signaling. Both fork progression and checkpoint response are regulated by the phosphorylation of the canonical CDK sites at the distal NSD. Together, our data suggest that the eukaryotic MCM helicase contains an intrinsic regulatory domain that integrates multiple signals to coordinate origin activation and replication fork progression under stress conditions

Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

The band structure of a prototypical dilute ferromagnetic semiconductor, Ga$_{1-x}$Mn$_{x}$As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy ($E_{F}$) resides in a Mn induced impurity band (IB). This conclusion is based upon careful analysis of the frequency and temperature dependence of the optical conductivity ($\sigma_{1}(\omega,T)$). From our analysis of $\sigma_{1}(\omega,T)$ we infer a large effective mass ($m^*$) of the carriers, supporting the view that conduction occurs in an IB. Our results also provide useful insights into the transport properties of Mn-doped GaAs.Comment: 4 pages, 4 figure

Antisite effect on ferromagnetism in (Ga,Mn)As

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from Tc ~ p^0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.Comment: 10 pages, 7 figure